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MMDF2C03HD
ELECTRICAL CHARACTERISTICS ? continued (T A = 25 ° C unless otherwise noted) (Note 6)
Characteristic
Symbol
Polarity
Min
Typ
Max
Unit
SOURCE ? DRAIN DIODE CHARACTERISTICS (T C = 25 ° C)
Forward Voltage (Note 7)
Reverse Recovery Time
Reverse Recovery Storage
Charge
(I S = 3.0 Adc, V GS = 0 Vdc)
(I S = 2.0 Adc, V GS = 0 Vdc)
(I F = I S , dI S /dt = 100 A/ m s)
V SD
t rr
t a
t b
Q RR
(N)
(P)
(N)
(P)
(N)
(P)
(N)
(P)
(N)
(P)
?
?
?
?
?
?
?
?
?
?
0.82
1.82
24
42
17
16
7.0
26
0.025
0.043
1.2
2.0
?
?
?
?
?
?
?
?
Vdc
ns
m C
6. Negative signs for P ? Channel device omitted for clarity.
7. Pulse Test: Pulse Width ≤ 300 m s, Duty Cycle ≤ 2%.
TYPICAL ELECTRICAL CHARACTERISTICS
N ? Channel
P ? Channel
6
5
4
V GS = 10 V
4.5 V
4.3 V
4.1 V
3.9 V
3.7 V
3.5 V
3.3 V
T J = 25 ° C
4
3
V GS = 10 V 4.5 V
3.9 V
3.7 V 3.5 V
3.3 V
T J = 25 ° C
3
3.1 V
2
3.1 V
2
2.9 V
1
2.9 V
1
2.7 V
2.5 V
2.7 V
2.5 V
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
0
0
0.2
0.4 0.6 0.8
1 1.2
1.4 1.6
1.8
2
V DS , DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. On ? Region Characteristics
V DS , DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. On ? Region Characteristics
6
V DS ≥ 10 V
4
V DS ≥ 10 V
5
3
4
T J = 100 ° C
3
2
T J = 100 ° C
2
1
- 55 ° C
25 ° C
1
25 ° C
- 55 ° C
0
2
2.5 3 3.5
4
0
1.5
1.7
1.9 2.1 2.3
2.5
2.7 2.9 3.1 3.3
3.5
3.7
V GS , GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
http://onsemi.com
3
V GS , GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
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